The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Apr. 24, 2009
Masahiro Kawasaki, Cambridge, GB;
Masaaki Fujimori, Kodaira, JP;
Takeo Shiba, Kodaira, JP;
Shuji Imazeki, Hitachi, JP;
Tadashi Arai, Kumagaya, JP;
Masahiro Kawasaki, Cambridge, GB;
Masaaki Fujimori, Kodaira, JP;
Takeo Shiba, Kodaira, JP;
Shuji Imazeki, Hitachi, JP;
Tadashi Arai, Kumagaya, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.