The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jun. 28, 2007
Jong-moo Huh, Gyeonggi-do, KR;
Kyu-sik Cho, Suwon-si, KR;
Kunal Girotra, Suwon-si, KR;
Joo-hoo Choi, Seoul, KR;
Byoung-june Kim, Seoul, KR;
Jong-Moo Huh, Gyeonggi-do, KR;
Kyu-Sik Cho, Suwon-si, KR;
Kunal Girotra, Suwon-si, KR;
Joo-Hoo Choi, Seoul, KR;
Byoung-June Kim, Seoul, KR;
Abstract
The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.