The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Apr. 01, 2008
Yasuhiro Inokuchi, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Yasuhiro Ogawa, Hamura, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C. or less, and removing a natural oxide film or impurities formed on the silicon surface; and a substrate unloading step of unloading the substrate to outside of the processing chamber.