The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Aug. 11, 2010
Sang-oh Lee, Gyeonggi-do, KR;
Sung-kwon Lee, Gyeonggi-do, KR;
Jun-hyeub Sun, Gyeonggi-do, KR;
Jong-sik Bang, Gyeonggi-do, KR;
Sang-Oh Lee, Gyeonggi-do, KR;
Sung-Kwon Lee, Gyeonggi-do, KR;
Jun-Hyeub Sun, Gyeonggi-do, KR;
Jong-Sik Bang, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for forming contact holes in a semiconductor device includes forming a hard mask layer over an etch target layer, forming a first line pattern in the hard mask layer by etching a portion of the hard mask layer through a primary etch process, forming a second line pattern crossing the first line pattern by etching the hard mask layer including the first line pattern through a secondary etch process, and etching the etch target layer by using the hard mask layer including the first line pattern and the second line pattern as an etch barrier.