The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Nov. 07, 2006
Kenichiro Nishida, Tokyo, JP;
Ryusuke Kawakami, Tokyo, JP;
Norihito Kawaguchi, Tokyo, JP;
Miyuki Masaki, Tokyo, JP;
Kenichiro Nishida, Tokyo, JP;
Ryusuke Kawakami, Tokyo, JP;
Norihito Kawaguchi, Tokyo, JP;
Miyuki Masaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens arrayor a light guideand concentrating optical systemsandor by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substratecan be enhanced as much, it is possible to improve the processing ability of the laser annealing.