The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Sep. 12, 2008
Yutaka Hayashi, Tsukuba, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Yutaka Hayashi, Tsukuba, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., , JP;
Other;
Abstract
A high voltage operating field effect transistor has a source region and a drain region spaced apart from each other in a surface of a substrate. The source region is operative to receive at least one of a signal electric potential and a signal current. A semiconductor channel formation region is disposed in the surface of the substrate between the source region and the drain region. A gate region is disposed above the channel formation region and is operative to receive a bias electric potential having an absolute value equal to or larger than a first constant electric potential which changes according to an increase or decrease in a drain electric potential. A gate insulating film region is disposed between the channel formation region and the gate region.