The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Dec. 11, 2007
Sang Soo Lee, Seoul, KR;
Cha Deok Dong, Icheon-si, KR;
Hyun Soo Shon, Suwon-si, KR;
Woo RI Jeong, Icheon-si, KR;
Sang Soo Lee, Seoul, KR;
Cha Deok Dong, Icheon-si, KR;
Hyun Soo Shon, Suwon-si, KR;
Woo Ri Jeong, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
An embodiment of the invention relates to a method of forming an isolation layer of a flash memory device. An isolation layer is formed using a PSZ-based material and a nitride film of liner form is deposited on a trench before the PSZ film is deposited. An oxide film can be prevented from remaining on a top of the sidewalls of a conductive film for a floating gate through an etch process employing the etch rate. The thickness of a dielectric film can be prevented from increasing when a dielectric film is deposited. Accordingly, the contact area of the floating gate and the dielectric film can be increased and the coupling ratio between the floating gate and the control gate can be improved.