The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jan. 07, 2010
Xiaoxin Zhang, Yongin-si, KR;
Wenxu Xianyu, Suwon-si, KR;
Takashi Noguchi, Yongin-si, KR;
Hans S. Cho, Seoul, KR;
Huaxiang Yin, Yongin-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Wenxu Xianyu, Suwon-si, KR;
Takashi Noguchi, Yongin-si, KR;
Hans S. Cho, Seoul, KR;
Huaxiang Yin, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.