The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
May. 12, 2009
Hisayuki Miki, Chiba, JP;
Yasunori Yokoyama, Ichihara, JP;
Takehiko Okabe, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Yasunori Yokoyama, Ichihara, JP;
Takehiko Okabe, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. Provided is a method in which a buffer layercomposed of a group III nitride compound is laminated on a substrateand then an n-type semiconductor layerprovided with an underlying layer, a light emitting layer, and an p-type semiconductor layerare sequentially laminated on the buffer layer, and is a method in which the buffer layeris formed so as to have a composition of AlGaN (0≦X<1) by activating, with plasma, and thereby reacting at least a metallic Ga source and a gas containing a group V element, and the underlying layeris formed on the buffer layer