The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2011

Filed:

Jul. 24, 2007
Applicants:

Seok Beom Choi, Daejeon, KR;

Bang Won OH, Seongnam, KR;

Jong Gun Woo, Suwon, KR;

Doo Go Baik, Suwon, KR;

Inventors:

Seok Beom Choi, Daejeon, KR;

Bang Won Oh, Seongnam, KR;

Jong Gun Woo, Suwon, KR;

Doo Go Baik, Suwon, KR;

Assignee:

Samsung LED Co., Ltd., Gyunggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.


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