The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jul. 18, 2007
Junichiro Sakata, Kanagawa, JP;
Masakazu Murakami, Kanagawa, JP;
Koji Moriya, Kanagawa, JP;
Yoshiaki Oikawa, Tochigi, JP;
Taketomi Asami, Saitama, JP;
Hisashi Ohtani, Tochigi, JP;
Junichiro Sakata, Kanagawa, JP;
Masakazu Murakami, Kanagawa, JP;
Koji Moriya, Kanagawa, JP;
Yoshiaki Oikawa, Tochigi, JP;
Taketomi Asami, Saitama, JP;
Hisashi Ohtani, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.