The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2011

Filed:

May. 28, 2009
Applicants:

Shayan Zhang, Austin, TX (US);

Jack M. Higman, Austin, TX (US);

Prashant U. Kenkare, Austin, TX (US);

Pelley H. Perry, Austin, TX (US);

Andrew C. Russell, Austin, TX (US);

Inventors:

Shayan Zhang, Austin, TX (US);

Jack M. Higman, Austin, TX (US);

Prashant U. Kenkare, Austin, TX (US);

Pelley H. Perry, Austin, TX (US);

Andrew C. Russell, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory has a first bit line, a second bit line, and a word line. A memory cell is coupled to the word line and the first and second bit lines. A sense amplifier has a first input, a second input, a first output, and a second output. A pair of coupling transistors includes a first transistor and a second transistor. In one embodiment, the first transistor is coupled between the first bit line and the first input of the sense amplifier and the second transistor is coupled between the second bit line and the second input of the sense amplifier. A write back circuit is coupled to an output of the sense amplifier. The write back circuit writes back to the memory cell a value read from the memory cell during a read cycle.


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