The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jan. 17, 2007
Applicants:
Myoung-jae Lee, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Hyun-sang Hwang, Yongin-si, KR;
Dong-soo Lee, Yongin-si, KR;
Inventors:
Myoung-jae Lee, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Hyun-sang Hwang, Yongin-si, KR;
Dong-soo Lee, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.