The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
May. 15, 2008
Kenichi Tanaka, Tokyo, JP;
Eiji Umetsu, Tokyo, JP;
Kazuaki Ikarashi, Tokyo, JP;
Kota Asatsuma, Tokyo, JP;
Norimasa Okanishi, Tokyo, JP;
Yoshihiro Nishiyama, Tokyo, JP;
Masamichi Saito, Tokyo, JP;
Yosuke Ide, Tokyo, JP;
Kazumasa Nishimura, Tokyo, JP;
Ryo Nakabayashi, Tokyo, JP;
Hidekazu Kobayashi, Tokyo, JP;
Akio Hanada, Tokyo, JP;
Naoya Hasegawa, Tokyo, JP;
Kenichi Tanaka, Tokyo, JP;
Eiji Umetsu, Tokyo, JP;
Kazuaki Ikarashi, Tokyo, JP;
Kota Asatsuma, Tokyo, JP;
Norimasa Okanishi, Tokyo, JP;
Yoshihiro Nishiyama, Tokyo, JP;
Masamichi Saito, Tokyo, JP;
Yosuke Ide, Tokyo, JP;
Kazumasa Nishimura, Tokyo, JP;
Ryo Nakabayashi, Tokyo, JP;
Hidekazu Kobayashi, Tokyo, JP;
Akio Hanada, Tokyo, JP;
Naoya Hasegawa, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.