The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2011

Filed:

Aug. 02, 2010
Applicants:

Shide Cheng, Fremont, CA (US);

Zhu Feng, Pleasanton, CA (US);

Ellis T. Cha, San Ramon, CA (US);

Inventors:

Shide Cheng, Fremont, CA (US);

Zhu Feng, Pleasanton, CA (US);

Ellis T. Cha, San Ramon, CA (US);

Assignee:

SAE Magnetics (HK) Ltd., Shatin, N.T., HK;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/82 (2006.01); B01J 19/12 (2006.01); B05D 5/12 (2006.01); C23C 16/00 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlONor MeAlONwhere Mesymbolizes Ti, Sior Crand where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.


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