The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2011

Filed:

Jul. 03, 2008
Applicant:

Ryoung-han Kim, Guilderland, NY (US);

Inventor:

Ryoung-han Kim, Guilderland, NY (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); G03B 27/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

Focus monitoring for a photolithographic applications is provided by illuminating a photoresist layer with a light beam transmitted through a first binary mask to define a circuit pattern on an underlying substrate and then illuminating the photoresist layer with an unbalanced off-axis light beam transmitted through a second binary mask. The second mask contains a shifting feature configuration in one portion, while another portion blocks light transmission to the chip design area of the photoresist. After development of the photoresist layer, the pattern formed by illumination of the second mask can be compared with a predefined reference feature on the photoresist layer to determine whether a shift, if any, is within acceptable focus limits.


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