The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jan. 25, 2008
Applicants:
Toshiaki Morita, Hitachi, JP;
Yusuke Yasuda, Hitachi, JP;
Eiichi Ide, Hitachi, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.