The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
May. 13, 2009
Applicant:
Masakatsu Nakai, Kanagawa, JP;
Inventor:
Masakatsu Nakai, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a semiconductor device having a power cutoff transistor including a semiconductor substrate of a first conductivity type; and first and second wells of the first conductivity type formed to be spaced from each other in the semiconductor substrate.
Nakai, Masakatsu. (2011). Semiconductor device having a power cutoff transistor (U.S. Patent No. 8008733). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8008733
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile