The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jan. 31, 2008
Hitoshi Okamoto, Kanagawa, JP;
Morihisa Hirata, Kanagawa, JP;
Hitoshi Okamoto, Kanagawa, JP;
Morihisa Hirata, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
To reduce the leak current in the MOSFET connected between the pad and the ground. There are provided a pad PAD for an input or output signal, an n-type MOSFET Mconnected between the pad PAD and the ground and having its gate terminal and backgate connected in common, and a potential control circuitthat controls a potential Vb of the gate terminal and the backgate of the n-type MOSFET Mbased on a potential Vin of the pad PAD. The potential control circuitcomprises n-type MOSFETs Mand M; the n-type MOSFET Mhas its gate terminal and backgate connected to backgates and drains of the n-type MOSFETs Mand M; the n-type MOSFET Mhas its source grounded and its gate terminal connected to the pad PAD via a resistance R; and the n-type MOSFET Mhas its source connected to the pad PAD and its gate terminal grounded.