The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Aug. 28, 2007
Kenji Nakamura, Tsurugashima, JP;
Takuya Hata, Tsurugashima, JP;
Atsushi Yoshizawa, Tsurugashima, JP;
Katsunari Obata, Tokyo, JP;
Hiroyuki Endoh, Tokyo, JP;
Kenji Nakamura, Tsurugashima, JP;
Takuya Hata, Tsurugashima, JP;
Atsushi Yoshizawa, Tsurugashima, JP;
Katsunari Obata, Tokyo, JP;
Hiroyuki Endoh, Tokyo, JP;
Dai Nippon Printing Co., Ltd., Tokyo, JP;
Abstract
An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture.