The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Dec. 15, 2006
Jung-geun Jee, Seoul, KR;
Young-jin Noh, Suwon-si, KR;
Bon-young Koo, Suwon-si, KR;
Chul-sung Kim, Seongnam-si, KR;
Hun-hyeoung Leam, Yongin-si, KR;
Woong Lee, Seoul, KR;
Jung-Geun Jee, Seoul, KR;
Young-Jin Noh, Suwon-si, KR;
Bon-Young Koo, Suwon-si, KR;
Chul-Sung Kim, Seongnam-si, KR;
Hun-Hyeoung Leam, Yongin-si, KR;
Woong Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.