The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Feb. 15, 2008
Jong-heun Lim, Seoul, KR;
Chang-ki Hong, Seongnam-si, KR;
Bo-un Yoon, Seoul, KR;
Seong-kyu Yun, Seoul, KR;
Suk-hun Choi, Suwon-si, KR;
Sang-yeob Han, Anyang-si, KR;
Jong-Heun Lim, Seoul, KR;
Chang-Ki Hong, Seongnam-si, KR;
Bo-Un Yoon, Seoul, KR;
Seong-Kyu Yun, Seoul, KR;
Suk-Hun Choi, Suwon-si, KR;
Sang-Yeob Han, Anyang-si, KR;
Abstract
A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization process without exposing the pattern; performing an epitaxy growth process on the first planarized semiconductor layer to form a crystalline semiconductor layer; and planarizing the crystalline semiconductor layer until the pattern is exposed to form a crystalline semiconductor pattern.