The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Mar. 29, 2007
Ryota Fujitsuka, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Ryota Fujitsuka, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.