The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Nov. 09, 2007
Sung-shan Tai, San Jose, CA (US);
Tiesheng LI, San Jose, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hong Chang, Cupertino, CA (US);
Moses Ho, Campbell, CA (US);
Sung-Shan Tai, San Jose, CA (US);
Tiesheng Li, San Jose, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hong Chang, Cupertino, CA (US);
Moses Ho, Campbell, CA (US);
Abstract
A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.