Method of manufacturing thin film transistor array substrate

Abstract

A simplified method of manufacturing a thin film transistor array substrate is disclosed. The method includes: forming gate electrodes, gate lines and gate pads on a substrate with the use of a first mask; forming a gate insulation film, a semiconductor layer, and a metal layer on the substrate; forming a first photoresist pattern on the metal layer with the use of a second mask; forming first contact holes for the gate pads with the use of the first photoresist pattern; forming a second photoresist pattern, and providing patterns for data pads, data lines, and thin film transistors with the use of the second photoresist pattern; providing a third photoresist pattern, and forming contact holes for source/drain electrodes and second contact holes the gate pads with the use of the third photoresist pattern; forming a protective film on the substrate and providing a fourth photoresist pattern on the protective film with the use of a third mask; forming third contact holes for the gate pads, contact holes for the data pads, gate lines, and drain electrodes, and contact holes for pixel electrodes, with the use of the fourth photoresist pattern; and forming a transparent conduction film on the fourth photoresist pattern having the contact holes.