The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 20, 2006
Fabrice Charra, Marcoussis, FR;
Matthieu Silly, Palaiseau, FR;
Patrick Soukiassian, Remy les Chevreuse, FR;
Fabrice Charra, Marcoussis, FR;
Matthieu Silly, Palaiseau, FR;
Patrick Soukiassian, Remy les Chevreuse, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Universite Paris SUD (Paris II), Orsay, FR;
Abstract
The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.