The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Oct. 14, 2009
Han Wui Then, Urbana, IL (US);
Gabriel Walter, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Han Wui Then, Urbana, IL (US);
Gabriel Walter, Champaign, IL (US);
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.