The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Nov. 17, 2009
Masakazu Amanai, Kawasaki, JP;
Masahiko Kashimura, Kawasaki, JP;
Yoshihiro Nagai, Kawasaki, JP;
Masato Taki, Nishikamo-gun, JP;
Norihiro Honda, Toyota, JP;
Kazushi Yamanaka, Ichinomiya, JP;
Masakazu Amanai, Kawasaki, JP;
Masahiko Kashimura, Kawasaki, JP;
Yoshihiro Nagai, Kawasaki, JP;
Masato Taki, Nishikamo-gun, JP;
Norihiro Honda, Toyota, JP;
Kazushi Yamanaka, Ichinomiya, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-ken, JP;
Abstract
A nonvolatile memory device includes a memory cell that stores data by presence or absence of electrons accumulated in a floating gate, a read reference current generator that generates a read reference current for reading data from the memory cell based on a constant current from a constant current generator included therein, and a read voltage generator that generates a read voltage to be applied to a control gate of the memory cell during data reading. The read reference current generator generates a monitor voltage that varies according to variation of the read reference current and a threshold voltage of the memory cell. The read voltage generator generates the read voltage based on the monitor voltage.