The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Nov. 15, 2007
Henk Boezen, Nijmegen, NL;
Clemens DE Haas, Ewijk, NL;
Gerrit Bollen, Dieren, NL;
Inesz Weijland, Malden, NL;
Henk Boezen, Nijmegen, NL;
Clemens De Haas, Ewijk, NL;
Gerrit Bollen, Dieren, NL;
Inesz Weijland, Malden, NL;
NXP B.V., Eindhoven, NL;
Abstract
The present invention relates to a circuit arrangement, which is used for controlling a high side CMOS transistor (M) in a high voltage deep sub micron process. To provide a circuit arrangement for switching a high side CMOS transistor (M) in a circuit having a very thin gate oxide, produced by a deep sub micron process, a circuit arrangement is proposed for controlling a high side CMOS transistor (M), wherein the high side CMOS transistor (M) is coupled between a high side voltage potential (Vbat) and a control output (OUT) for switching an external device, the high side CMOS transistor (M) is controlled at its gate by a reference potential (Vbat-Vref), which is provided by a high side voltage reference () having a capacitor (C), which is charged for switching on and discharged for switching off the high side CMOS transistor (M).