The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 19, 2008
Applicant:
Kentaro Eda, Oita, JP;
Inventor:
Kentaro Eda, Oita, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor wafer, a source region and a drain region formed within the semiconductor wafer, a gate electrode formed on the semiconductor wafer between the source region and the drain region, an interlayer film formed on the semiconductor wafer and the gate electrode, and a dummy floating pattern embedded into the interlayer film, having a film containing metal or a metallic compound having tensile stress or compressive stress and formed to be spaced from the semiconductor wafer and the gate electrode.