The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Nov. 29, 2007
Deok-kee Kim, Bedford Hills, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Dan Moy, Bethel, CT (US);
Norman W. Robson, Hopewell Junction, NY (US);
John M. Safran, Wappingers Falls, NY (US);
Kenneth J. Stein, Sandy Hook, CT (US);
Deok-kee Kim, Bedford Hills, NY (US);
Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);
Dan Moy, Bethel, CT (US);
Norman W. Robson, Hopewell Junction, NY (US);
John M. Safran, Wappingers Falls, NY (US);
Kenneth J. Stein, Sandy Hook, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal layer and a semiconductor layer are sequentially deposited on a substrate. The semiconductor layer and the metal layer are lithographically patterned to form a stack of a semiconductor portion and a metal gate portion, which is preferably performed concurrently with formation of at least one metal gate stack. In one embodiment, the size of the semiconductor portion is reduced and a metal semiconductor alloy portion is formed on the semiconductor portion by metallization. In a first electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the metal semiconductor alloy portion and the metal gate portion. In another embodiment, two disjoined metal semiconductor alloy portions are formed on the semiconductor portion. In a second electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the two previously disjoined metal semiconductor alloy portions.