The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 10, 2008
Hisao Ichijo, Kizugawa, JP;
Alberto Adan, Ikoma, JP;
Kazushi Naruse, Nara, JP;
Atsushi Kagisawa, Kashihara, JP;
Hisao Ichijo, Kizugawa, JP;
Alberto Adan, Ikoma, JP;
Kazushi Naruse, Nara, JP;
Atsushi Kagisawa, Kashihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Provided are a semiconductor device which can be manufactured at low cost and has a low on-resistance and a high withstand voltage, and its manufacturing method. The semiconductor device comprises an N-type well area formed on a P-type semiconductor substrate, a P-type body area formed within the well area, an N-type source area formed within the body area, an N-type drain area formed at a distance from the body area within the well area, a gate insulating film formed so as to overlay a part of the body area, a gate electrode formed on the gate insulating film and a P-type buried diffusion area which makes contact with the bottom of the body area and extends to an area beneath the drain area in a direction parallel to the surface of the semiconductor substrate within the well area.