The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 12, 2007
Markus Weyers, Wildau, DE;
Martin Zorn, Berlin, DE;
Markus Weyers, Wildau, DE;
Martin Zorn, Berlin, DE;
Forschungsverbund Berlin E.V., Berlin, DE;
Abstract
The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely. The semiconductor component according to the invention has a substrate (), a first charge carrier barrier layer () arranged on the substrate (), a photoluminescent layer () arranged on the first charge carrier barrier layer (), a second charge carrier barrier layer () arranged on the photoluminescent layer (), and an active electroluminescent layer () composed of at least one inorganic semiconductor and arranged on the second charge carrier barrier layer (), wherein the photoluminescent layer () absorbs at least part of the light emitted by the electroluminescent layer (), and an at least partly transparent contact layer () arranged on the active electroluminescent layer () is furthermore provided.