The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jul. 22, 2008
Chih-chao Yang, Poughkeepsie, NY (US);
Simon Gaudet, Montreal, CA;
Christian Lavoie, Ossining, NY (US);
Shom Ponoth, Fishkill, NY (US);
Terry A. Spooner, New Fairfield, CT (US);
Chih-Chao Yang, Poughkeepsie, NY (US);
Simon Gaudet, Montreal, CA;
Christian Lavoie, Ossining, NY (US);
Shom Ponoth, Fishkill, NY (US);
Terry A. Spooner, New Fairfield, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.