The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jun. 29, 2006
Peidong Yang, El Cerrito, CA (US);
Heonjin Choi, Seoul, KR;
Sangkwon Lee, Daejeon, KR;
Rongrui He, Albany, CA (US);
Yanfeng Zhang, El Cerrito, CA (US);
Tevye Kuykendal, Berkeley, CA (US);
Peter Pauzauskie, Berkeley, CA (US);
Peidong Yang, El Cerrito, CA (US);
Heonjin Choi, Seoul, KR;
Sangkwon Lee, Daejeon, KR;
Rongrui He, Albany, CA (US);
Yanfeng Zhang, El Cerrito, CA (US);
Tevye Kuykendal, Berkeley, CA (US);
Peter Pauzauskie, Berkeley, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires GaMnN (x=0.07) were synthesized. The nanowires, which have diameters of ˜10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.