The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 27, 2007
Applicant:
Byung-soo Eun, Seoul, KR;
Inventor:
Byung-Soo Eun, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming an isolation layer in a semiconductor device includes forming a trench in a semiconductor substrate. A flowable insulation layer is formed to fill the trench. The flowable insulation layer is recessed. A buried insulation layer is deposited on the flowable insulation layer while keeping a deposition sputtering rate (DSR) below about 22 so as to fill the trench with the buried insulation layer while restraining the buried insulation layer from growing on a lateral portion of the trench.