The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Mar. 25, 1999
Seung-dong Kang, Seoul, KR;
Chang-seog Ko, Seoul, KR;
Seung-jin Lee, Busan-kwangyeokshi, KR;
Kyoung-bok Lee, Kyunggi-do, KR;
Seung-Dong Kang, Seoul, KR;
Chang-seog Ko, Seoul, KR;
Seung-jin Lee, Busan-kwangyeokshi, KR;
Kyoung-Bok Lee, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, Kyungki-do, KR;
Abstract
A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a reacting chamber to deposit a small amount of HSG nuclei on a conductive layer pattern of a capacitor electrode during a step of stabilizing the substrate temperature. After the substrate temperature is stabilized, a larger amount of source gas is introduced into the chamber to form additional HSG nuclei. Thereafter, a step of annealing is performed to form the HSG layer.