The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Sep. 11, 2009
Francois Pagette, Wappingers Falls, NY (US);
Christian Lavoie, Ossining, NY (US);
Anna Topol, Wappingers Falls, NY (US);
Francois Pagette, Wappingers Falls, NY (US);
Christian Lavoie, Ossining, NY (US);
Anna Topol, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention provide a method of fabricating a semiconductor device. The method includes defining a sub-collector region in a layer of doped semiconductor material; forming an active region, a dielectric region, and a reach-through region on top of the layer of doped semiconductor material with the dielectric region separating the active region from the reach-through region; and siliciding the reach-through region and a portion of the sub-collector region to form a partially silicided conductive pathway. A semiconductor device made thereby is also provided.