The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2011

Filed:

Mar. 08, 2011
Applicant:

Jung-hua Chen, Taoyuan County, TW;

Inventor:

Jung-Hua Chen, Taoyuan County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate is provided. A pillar protruding out of a surface of the substrate is already formed on the substrate, and a patterned layer is already formed on the pillar. The pillar includes a lower part, a channel region, and an upper part from bottom to top, and the lower part has a first doped region. A gate dielectric layer is formed on a sidewall at one side of the pillar. A surrounding gate is formed on the gate dielectric layer located on the channel region, and a base line electrically connected to the channel region is formed on a sidewall at the other side of the pillar. A second doped region is formed in the upper part of the pillar.


Find Patent Forward Citations

Chen, Jung-Hua. (2011). Fabricating method of vertical transistor (U.S. Patent No. 8003457). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8003457

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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