The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 23, 2008
Jae-kyeong Jeong, Suwon-si, KR;
Hyun-soo Shin, Suwon-si, KR;
Yeon-gon MO, Suwon-si, KR;
Hyung-jun Kim, Pohang-si, KR;
Seong-joon Lim, Pohang-si, KR;
Jae-Kyeong Jeong, Suwon-si, KR;
Hyun-Soo Shin, Suwon-si, KR;
Yeon-Gon Mo, Suwon-si, KR;
Hyung-Jun Kim, Pohang-si, KR;
Seong-Joon Lim, Pohang-si, KR;
Samsung Mobile Display Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×10atom/cmto about 1×10atom/cm, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.