The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2011

Filed:

Dec. 09, 2010
Applicants:

Jeongil Lee, Seoul, KR;

Myoungho Lee, Kyounggi-do, KR;

Bigildis Dosdos, San Jose, CA (US);

Charles Suico, Milpitas, CA (US);

Edwin Man Fai Lee, Shatin, HK;

David Chong Sook Lim, Penang, MY;

Adriano M. Vilas-boas, Campbell, CA (US);

Inventors:

Jeongil Lee, Seoul, KR;

Myoungho Lee, Kyounggi-do, KR;

Bigildis Dosdos, San Jose, CA (US);

Charles Suico, Milpitas, CA (US);

Edwin Man Fai Lee, Shatin, HK;

David Chong Sook Lim, Penang, MY;

Adriano M. Vilas-Boas, Campbell, CA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-chip module suitable for use in a battery protection circuit. The multi-chip module includes an integrated circuit chip, a first power transistor, a second power transistor, a first connection structure electrically coupling the integrated circuit chip to the first power transistor, a second connection structure electrically coupling the integrated circuit chip to the second power transistor, and a leadframe structure comprising a first lead, a second lead, a third lead and a fourth lead, wherein the integrated circuit chip, the first power transistor, and the second power transistor are mounted on the leadframe structure. A molding material covers at least part of the integrated circuit chip, the first power transistor, the second power transistor, the first connection structure, and the second connection structure.


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