The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 13, 2005
Katsura Hirai, Hachioji, JP;
Atsuko Matsuda, Hachioji, JP;
Tatsuo Tanaka, Sagamihara, JP;
Chiyoko Takemura, Tokyo, JP;
Rie Katakura, Hino, JP;
Reiko Obuchi, Yokohama, JP;
Katsura Hirai, Hachioji, JP;
Atsuko Matsuda, Hachioji, JP;
Tatsuo Tanaka, Sagamihara, JP;
Chiyoko Takemura, Tokyo, JP;
Rie Katakura, Hino, JP;
Reiko Obuchi, Yokohama, JP;
Konica Minolta Holdings, Inc., Chiyoda-Ku, Tokyo, JP;
Abstract
A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.