The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Nov. 17, 2008
Jeong-ho Lee, Seoul, KR;
Sang-il Jung, Seoul, KR;
Young-hoon Park, Gyeonggi-do, KR;
Jun-seok Yang, Gyeonggi-do, KR;
An-chul Shin, Gyeonggi-do, KR;
Min-young Jung, Seoul, KR;
Jeong-Ho Lee, Seoul, KR;
Sang-Il Jung, Seoul, KR;
Young-Hoon Park, Gyeonggi-do, KR;
Jun-Seok Yang, Gyeonggi-do, KR;
An-Chul Shin, Gyeonggi-do, KR;
Min-Young Jung, Seoul, KR;
Abstract
A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.