The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Mar. 30, 2010
Toshiya Umemura, Aichi-ken, JP;
Ryohei Inazawa, Aichi-ken, JP;
Koichi Goshonoo, Aichi-ken, JP;
Tomoharu Shiraki, Aichi-ken, JP;
Toshiya Umemura, Aichi-ken, JP;
Ryohei Inazawa, Aichi-ken, JP;
Koichi Goshonoo, Aichi-ken, JP;
Tomoharu Shiraki, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.