The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Dec. 25, 2008
Chi-jen Kao, Taipei, TW;
Yu-rung Peng, Taoyuan County, TW;
Tsung-hua Yang, Kaohsiung, TW;
Yi-kai Wang, Hsinchu, TW;
Tarng-shiang HU, Hsinchu, TW;
Chi-Jen Kao, Taipei, TW;
Yu-Rung Peng, Taoyuan County, TW;
Tsung-Hua Yang, Kaohsiung, TW;
Yi-Kai Wang, Hsinchu, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.