The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Sep. 22, 2009
Andre Strittmatter, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Andre Strittmatter, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.