The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2011

Filed:

Feb. 22, 2008
Applicants:

Ulrich Weichmann, Aachen, DE;

Jaione Bengoechea Apezteguia, Aachen, DE;

Patrice Jean-pierre Camy, Caen, FR;

Jean-louis Doualan, Rots, FR;

Richard Moncorge, Breville, FR;

Inventors:

Ulrich Weichmann, Aachen, DE;

Jaione Bengoechea Apezteguia, Aachen, DE;

Patrice Jean-Pierre Camy, Caen, FR;

Jean-Louis Doualan, Rots, FR;

Richard Moncorge, Breville, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/16 (2006.01); H01S 3/14 (2006.01); H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a solid state laser device with a solid state gain medium between two resonator end mirrors () and a GaN-based pump laser () arranged to optically pump the solid state gain medium. The solid state gain medium is a Pr-doped crystalline or polycrystalline host material () which has a cubic crystalline structure and highest phonon energies of ≦600 cmand provides a band gap of ≧5.5 eV. The proposed solid state laser can be designed to emit at several visible wavelengths with the emitted power showing a reduced dependence on the temperature of the GaN-based pump laser ().


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