The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Apr. 06, 2010
Applicant:
Hideto Hidaka, Hyogo, JP;
Inventor:
Hideto Hidaka, Hyogo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01); G11C 11/15 (2006.01); G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.