The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Feb. 06, 2007
Hiroto Ootake, Tokyo, JP;
Masayoshi Tagami, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Hiroto Ootake, Tokyo, JP;
Masayoshi Tagami, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring () is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (), a SiOCH film () and a silicon oxide film () [(e)]. The silicon oxide film () is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) () is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.