The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Nov. 16, 2010
Applicants:
Huaxiang Yin, Yongin-si, KR;
Takashi Noguchi, Yongin-si, KR;
Hyuk Lim, Seoul, KR;
Wenxu Xianyu, Suwon-si, KR;
Hans S. Cho, Seoul, KR;
Inventors:
Huaxiang Yin, Yongin-si, KR;
Takashi Noguchi, Yongin-si, KR;
Hyuk Lim, Seoul, KR;
Wenxu Xianyu, Suwon-si, KR;
Hans S. Cho, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.